ts13005 high voltage npn transistor 1/6 version: d13 to - 220 i to - 2 20 product summary bv ceo 400v bv cbo 700v i c 4a v ce(sat) 1v @ i c =4a, i b =1a features high voltage high speed switching block diagram structure silicon triple diffused type npn silicon transistor ordering information part no. package packing ts13005cz c0 to-220 50pcs / tube ts13005cz c0g to-220 50pcs / tube ts13005ci c0 ito-220 50pcs / tube ts13005ci c0g ito-220 50pcs / tube note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 4 a pulse 8 base current dc i b 2 a pulse 4 total power dissipation to-220 p tot 75 w ito-220 30 operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: single pulse. p w = 300us, duty 2% pin definition : 1. base 2. collector 3. emitter
ts13005 high voltage npn transistor 2/6 version: d13 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c =1ma, i b =0 bv cbo 700 -- -- v collector-emitter breakdown voltage i c =10ma, i e =0 bv ceo 400 -- -- v emitter-base breakdown voltage i e =0.1ma, i c =0 bv ebo 9 -- -- v collector cutoff current v ce =400v, i b =0 i ceo -- -- 250 ua collector cutoff current v cb =700v, i e =0 i cbo -- -- 1 ma emitter cutoff current v eb = 9v, i c =0 i ebo -- -- 1 ma collector-emitter saturation voltage i c =1a, i b =0.2a i c =2a, i b =0.5a i c =4a, i b =1a v ce(sat)1 v ce(sat)2 v ce(sat)3 -- -- -- -- -- -- 0.5 0.6 1 v base-emitter saturation voltage i c =1a, i b =0.2a i c =2a, i b =0.5a v be(sat)1 v be(sat)2 -- -- -- -- 1.2 1.6 v dc current gain v ce =5v, i c = 1a v ce =5v, i c = 2a h fe 15 8 -- -- 32 40 dynamic frequency v ce =10v, i c =0.5a f t 4 -- -- mhz output capacitance v cb =10v, f =0.1mhz cob -- 65 -- pf resistive load turn on time v cc =125v, i c =2a, i b1 =i b2 =0.4a, t p =25us duty cycle 1% t on -- 0.3 0.7 us storage time t stg -- 2.2 3 us fall time t f -- 0.3 0.5 us note: pulse test: pulse width 300us, duty cycle 2%
ts13005 high voltage npn transistor 3/6 version: d13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. v ce(sat) v.s. v be(sat figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
ts13005 high voltage npn transistor 4/6 version: d13 to-220 mechanical drawing unit: millimeters marking diagram y = year code m = m onth code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
ts13005 high voltage npn transistor 5/6 version: d13 ito-220 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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